Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/16757
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dc.contributor.authorLow, Guorong.-
dc.date.accessioned2009-05-28T03:28:54Z-
dc.date.available2009-05-28T03:28:54Z-
dc.date.copyright2009en_US
dc.date.issued2009-
dc.identifier.urihttp://hdl.handle.net/10356/16757-
dc.description.abstractVertically aligned group IV semiconductor nanowires are great interest of research recently because of their promising applications in future large–density electronics and photonics and their compatibility with current Si dominated technology. In this project, nanosphere lithography will be explored for group IV nanowires formation via etching method. A monolayer of nanospheres will self-assembly on the substrate. The nanospheres will be trimmed by oxygen RIE method followed by pattern transferring. The vertical nanowires can then be formed by another etching method. The size, density of nanowires can be controlled.en_US
dc.format.extent57 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University-
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen_US
dc.titleNanosphere lithography for ordered-arrayed semiconductor nanowire formation via top-down methoden_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorPey Kin Leongen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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