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https://hdl.handle.net/10356/167613| Title: | Resistive memory, Pt/MoS2/GeS/Ag | Authors: | Pang, Yong Liang | Keywords: | Engineering::Electrical and electronic engineering | Issue Date: | 2023 | Publisher: | Nanyang Technological University | Source: | Pang, Y. L. (2023). Resistive memory, Pt/MoS2/GeS/Ag. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/167613 | Project: | A2078-221 | Abstract: | In this report is will go through regarding resistive memory the background behind it and how it stand out compared to the rest of the emerging memories in term of it low cost , high speed, simple structure good scalability. Going through an overview of the memory material, switching mode, mechanism, endurance, retention and uniformity. Understanding the device Pt/MoS2/GeS/Ag the characteristic show low operation voltage of below 1V. The promising aspect of RRAM and outlook. Finally Reflection. | URI: | https://hdl.handle.net/10356/167613 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Student Reports (FYP/IA/PA/PI) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| FYP_Report.pdf Restricted Access | 711.41 kB | Adobe PDF | View/Open |
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