Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/167614
Title: Mid-infrared semiconductor laser for sensing application
Authors: Woon, Ivan Seng Loong
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2023
Publisher: Nanyang Technological University
Source: Woon, I. S. L. (2023). Mid-infrared semiconductor laser for sensing application. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/167614
Project: A2028-221 
Abstract: Mid-infrared (MIR) semiconductor light amplification by stimulated emission of radiation (LASER) with broadband emission spectrum has gained lots of publicity in recent years. Its broadband feature within the MIR wavelength range paved the way for various important applications. The aim of the project is to focus on the characteristics of high-performance broadband MIR lasers, specifically quantum cascade laser (QCL), and compare QCL with existing technologies. The electrical characteristics were determined via obtaining the light output power-current-voltage (LIV) curve, optical characteristics were derived from the spectroscopy graph and interferogram, and gas sensing application was used to test the application of QCL on existing technologies. The characteristics of QCL were determined using simple setups designed by the lab technicians because it is both efficient and effective in obtaining results. On the other hand, a commercial laser was used for the gas sensing application to ensure relatability and reliability of results. This report includes the research and experimentations done on QCL.
URI: https://hdl.handle.net/10356/167614
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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