Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/167639
Title: Chemical mechanical polishing of germanium selectively grown on silicon
Authors: Tan, Bryan Yue Han
Keywords: Engineering::Electrical and electronic engineering::Nanoelectronics
Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2023
Publisher: Nanyang Technological University
Source: Tan, B. Y. H. (2023). Chemical mechanical polishing of germanium selectively grown on silicon. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/167639
Project: B2027-221 
Abstract: This report reviews the importance of the Chemical and Mechanical Planarization (CMP) process for photonics applications and discusses the various factors that affect the quality of CMP, and how to achieve optimality of the slurry recipe. Germanium-on-silicon (GOS) waveguides are fabricated for the purpose of chemical sensing by identifying unique chemical fingerprints that are present due to the different molecular vibrational modes, in the mid-infrared region. A novel fabrication method for waveguide was experimented, by using selective epitaxial germanium on silicon, an alternative to blanket germanium on silicon. The selective epitaxial GOS has the potential for reduced propagation loss compared to the more conventional blanket germanium on silicon, achieving a propagation loss of 11.53dB/cm before CMP, and is expected to improve after CMP by reducing thickness non-uniformity and improving material surface quality.
URI: https://hdl.handle.net/10356/167639
Schools: School of Electrical and Electronic Engineering 
Research Centres: A*STAR Institute of Material Research and Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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