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|Title:||Silicon thin film solar cells on ITO coated glass and silicon wafer||Authors:||Ee, Allan Koon Tat||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2009||Abstract:||To seek for reliable and cheap technology and material to produce a solar cell, intensive researches were carried out. Initial deposition was carried out with varying parameters to determine the growth rate of amorphous silicon. Parameters varied include working pressure and substrate temperature. Fabrication procedures were planned and executed to produce the full structure of a-Si solar cell. Various physical characterizations were performed to determine the deposition rate and film quality with these varying parameters. Characterization techniques chosen were not be destructive. Spectroscopic ellipsometry was used to determine growth rate and later verified with SEM and Profiler results. Surface roughness was measured with Atomic Force Microscopy technique and a comparative study between results obtained from different samples was made. Crystalline structures of different samples were characterized using Raman spectroscopy technique. Raman shift results were studied to determine if amorphous silicon were deposited. Study comprising of results obtained from Fourier Transform Infrared spectroscopy were undertaken. Presences of hydrogen inside the samples were analyzed using formulas and estimated concentrations were determined. Finally, electrical characterization was performed to help predict the efficiency of the fabricated solar cell.||URI:||http://hdl.handle.net/10356/16808||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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