Flexible gallium arsenide (GaAs) devices for various applications in internet of things (IoT) era

Abstract

As the world caves toward the Internet of Things (IoT) era, flexible electronic and optoelectronic devices such as transistors and photodetectors have seen enormous growth in market popularity. These devices allow functions such as scaling the energy bandgaps and path of degradation of the semiconductor.

In this project, GaAs NM was fabricated and transferred printed into a PET substrate using positive lithography and dry etching. The bandgap will be scaled by compressive and tensile straining and then analyzed using Raman spectroscopy. In addition, Gold (Au) and Titanium (Ti) were also deposited into the PET substrate to form MSM PD. The path of degradation can be analyzed from applying bias voltage to the MSM PD and observing the I-V characteristic graph captured by the microscope.