Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/168815
Title: A 1.1 V 25 ppm/°C relaxation oscillator with 0.045%/V line sensitivity for low power applications
Authors: Liao, Yizhuo
Chan, Pak Kwong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2023
Source: Liao, Y. & Chan, P. K. (2023). A 1.1 V 25 ppm/°C relaxation oscillator with 0.045%/V line sensitivity for low power applications. Journal of Low Power Electronics and Applications, 13(1), 15-. https://dx.doi.org/10.3390/jlpea13010015
Journal: Journal of Low Power Electronics and Applications 
Abstract: A fully-integrated CMOS relaxation oscillator, realized in 40 nm CMOS technology, is presented. The oscillator includes a stable two-transistor based voltage reference without an operational amplifier, a simple current reference employing the temperature-compensated composite resistor, and the approximated complementary to absolute temperature (CTAT) delay-based comparators compensate for the approximated proportional to absolute temperature (PTAT) delay arising from the leakage currents in the switches. This relaxation oscillator is designed to output a square wave with a frequency of 64 kHz in a duty cycle of 50% at a 1.1 V supply. The simulation results demonstrated that the circuit can generate a square wave, with stable frequency, against temperature and supply variation, while exhibiting low current consumption. For the temperature range from −20 °C to 80 °C at a 1.1 V supply, the oscillator’ output frequency achieved a temperature coefficient (T.C.) of 12.4 ppm/°C in a typical corner in one sample simulation. For a 200-sample Monte Carlo simulation, the obtained T.C. is 25 ppm/°C. Under typical corners and room temperatures, the simulated line sensitivity is 0.045%/V with the supply from 1.1 V to 1.6 V, and the dynamic current consumption is 552 nA. A better figure-of-merit (FoM), which equals 0.129%, is displayed when compared to the representative prior-art works.
URI: https://hdl.handle.net/10356/168815
ISSN: 2079-9268
DOI: 10.3390/jlpea13010015
Schools: School of Electrical and Electronic Engineering 
Rights: © 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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