Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/168959
Title: A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface
Authors: Chen, Qimiao
Zhou, Hao
Xu, Shengqiang
Huang, Yi-Chiau
Wu, Shaoteng
Lee, Kwang Hong
Gong, Xiao
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2023
Source: Chen, Q., Zhou, H., Xu, S., Huang, Y., Wu, S., Lee, K. H., Gong, X. & Tan, C. S. (2023). A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface. ACS Nano. https://dx.doi.org/10.1021/acsnano.2c12625
Project: NRF-CRP19-2017-01 
T2EP50121-0002 (MOE-000180-01) 
2021-T1-002-031 (RG112/21) 
Journal: ACS Nano 
Abstract: High-detectivity and low-cost short-wave infrared photodetectors with complementary metal−oxide−semiconductor (CMOS) compatibility are attractive for various applications such as next-generation optical communication, LiDAR, and molecular sensing. Here, GeSn/Ge multiple-quantum-well (MQW) photo-detectors with a dielectric nanohole array metasurface were proposed to realize high-detectivity and low-cost SWIR photodetection. The Ge nanohole array metasurface was utilized to enhance the light absorption in the GeSn/Ge MQW active layer. Compared with metallic nanostructures, the dielectric nanohole structure has the advantages of low intrinsic loss and CMOS compatibility. The introduction of metasurface architecture facilitates a 10.5 times enhanced responsivity of 0.232 A/W at 2 μm wavelength while slightly sacrificing the dark current density. Besides, the metasurface GeSn/Ge MQW photodetectors benefit 35% improvement in the 3 dB bandwidth compared to control GeSn/Ge MQW photodetectors, which can be attributed to the reduced RC delay. Due to the high responsivity and low dark current density, the room temperature specific detectivity at 2 μm is as high as 5.34 × 109 cm·Hz1/2/W, which is the highest among GeSn photodetectors and is better than commercial InSb and PbSe photodetectors operating at the similar wavelength. This work offers a promising approach for achieving low-cost and effective photodetection at 2 μm, contributing to the development of the 2 μm communication band.
URI: https://hdl.handle.net/10356/168959
ISSN: 1936-0851
DOI: 10.1021/acsnano.2c12625
Schools: School of Electrical and Electronic Engineering 
Organisations: Institute of Microelectronics, A*STAR 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © 2023 American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.2c12625.
Fulltext Permission: embargo_20240630
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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