Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/168994
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dc.contributor.authorSun, Kaixuanen_US
dc.contributor.authorWang, Qingruien_US
dc.contributor.authorZhou, Longen_US
dc.contributor.authorWang, Jingjuanen_US
dc.contributor.authorChang, Jingjingen_US
dc.contributor.authorGuo, Ruien_US
dc.contributor.authorTay, Beng Kangen_US
dc.contributor.authorYan, Xiaobingen_US
dc.date.accessioned2023-06-26T06:12:19Z-
dc.date.available2023-06-26T06:12:19Z-
dc.date.issued2023-
dc.identifier.citationSun, K., Wang, Q., Zhou, L., Wang, J., Chang, J., Guo, R., Tay, B. K. & Yan, X. (2023). 2D-3D perovskite memristor with low energy consumption and high stability for neural morphology calculation. Science China Materials, 66(5), 2013-2022. https://dx.doi.org/10.1007/s40843-022-2317-0en_US
dc.identifier.issn2199-4501en_US
dc.identifier.urihttps://hdl.handle.net/10356/168994-
dc.description.abstractRecently, rapid progress has been made in the application of organic-inorganic halide perovskites in electronic devices, such as memristors and artificial synaptic devices. Organic-inorganic halide perovskite is considered as a promising candidate for the next generation of computing devices due to its ion migration property and advantages in manufacturing. In this work, a two-dimensional (2D)-3D organic-inorganic hybrid perovskite memristor was studied, using the stacking structure of indium tin oxide (ITO)/FA1−yMAyPbI3−xClx/(PEA)2PbI4/Au. The results show that this new type of memristor has novel resistance switching characteristics, such as scanning-rate-dependent current switching property, good current-voltage (I–V) curve repeatability, and ultralow energy consumption. A defect-modulated electron tunneling mechanism is demonstrated using the p-i-n junction model, and it is proven that the conductance state of the memristive device is determined by the defect concentration in the perovskite film near the electrode sides. In addition to the good memristive properties, this 2D-3D perovskite memristor can also function well as an artificial synapse, and its internal defect movement can faithfully simulate the inflow and extrusion of Ca2+ in biological synapses. Moreover, this perovskite-based artificial synapse has ultra-low power consumption due to the switchable p-i-n structure in organic-inorganic halide perovskites. Our finding highlights the immense application potential of the 2D-3D perovskite memristor in the future neuromorphic computing system.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationAcRF TIER 2-MOE2019-T2-2-075en_US
dc.relation.ispartofScience China Materialsen_US
dc.rights© Science China Press 2023.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.title2D-3D perovskite memristor with low energy consumption and high stability for neural morphology calculationen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchCentre for Micro- and Nano-Electronics (CMNE)en_US
dc.contributor.researchUMI 3288 CINTRA (CNRS-NTU-THALES Research Alliances), NTUen_US
dc.identifier.doi10.1007/s40843-022-2317-0-
dc.identifier.scopus2-s2.0-85148470816-
dc.identifier.issue5en_US
dc.identifier.volume66en_US
dc.identifier.spage2013en_US
dc.identifier.epage2022en_US
dc.subject.keywordsPerovskiteen_US
dc.subject.keywordsIon Migrationen_US
dc.description.acknowledgementThis work was financially supported by the National Natural Science Foundation of China (61674050, 62004056, and 61874158), the Project of Distinguished Young of Hebei Province (A2018201231), the Support Program for the Top Young Talents of Hebei Province (70280011807), the Hundred Persons Plan of Hebei Province (E2018050004 and E2018050003), the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (SLRC2019018), the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences (XDB44000000-7), the Special Support Funds for National High Level Talents (041500120001), Hebei Basic Research Special Key Project (F2021201045), the Science and Technology Project of Hebei Education Department (QN2020178 and QN2021026), and Singapore Ministry of Education (AcRF TIER 2-MOE2019-T2-2-075).en_US
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