Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/169246
Title: Synthesizing metal oxide semiconductors on doped Si/SiO₂ flexible fiber substrates for wearable gas sensing
Authors: Niu, Feng
Zhou, Fugong
Wang, Zhixun
Wei, Lei
Hu, Jie
Dong, Lei
Ma, Yifei
Wang, Mei
Jia, Suotang
Chen, Xuyuan
Tong, Zhaomin
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2023
Source: Niu, F., Zhou, F., Wang, Z., Wei, L., Hu, J., Dong, L., Ma, Y., Wang, M., Jia, S., Chen, X. & Tong, Z. (2023). Synthesizing metal oxide semiconductors on doped Si/SiO₂ flexible fiber substrates for wearable gas sensing. Research, 6, 0100-. https://dx.doi.org/10.34133/research.0100
Journal: Research 
Abstract: Traditional metal oxide semiconductor (MOS) gas sensors have limited applications in wearable devices owing to their inflexibility and high-power consumption by substantial heat loss. To overcome these limitations, we prepared doped Si/SiO2 flexible fibers by a thermal drawing method as substrates to fabricate MOS gas sensors. A methane (CH4) gas sensor was demonstrated by subsequently in situ synthesizing Co-doped ZnO nanorods on the fiber surface. The doped Si core acted as the heating source through Joule heating, which conducted heat to the sensing material with reduced heat loss; the SiO2 cladding was an insulating substrate. The gas sensor was integrated into a miner cloth as a wearable device, and the concentration change of CH4 was monitored in real time through different colored light-emitting diodes. Our study demonstrated the feasibility of using doped Si/SiO2 fibers as the substrates to fabricate wearable MOS gas sensors, where the sensors have substantial advantages over tradition sensors in flexibility, heat utilization, etc.
URI: https://hdl.handle.net/10356/169246
ISSN: 2096-5168
DOI: 10.34133/research.0100
Schools: School of Electrical and Electronic Engineering 
Rights: © 2023 Feng Niu et al. Exclusive Licensee Science and Technology Review Publishing House. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License (CC BY 4.0).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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