Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/170080
Title: Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies
Authors: Tan, James
Shi, Xuncheng
Lu, Kunze
Joo, Hyo-Jun
Kim, Youngmin
Chen, Melvina
Zhang, Lin
Tan, Chuan Seng
Lim, Khee Yong
Quek, Elgin
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2023
Source: Tan, J., Shi, X., Lu, K., Joo, H., Kim, Y., Chen, M., Zhang, L., Tan, C. S., Lim, K. Y., Quek, E. & Nam, D. (2023). Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies. Optics Letters, 48(16), 4269-4271. https://dx.doi.org/10.1364/OL.497741
Project: RG 115/21 
A2083c0053 
NRF-CRP19-2017-01
NRF2022-QEP2-02-P13 
Journal: Optics Letters
Abstract: Quantum photonic circuits have recently attracted much attention owing to the potential to achieve exceptional performance improvements over conventional classical electronic circuits. Second-order χ(2) nonlinear processes play an important role in the realization of several key quantum photonic components. However, owing to their centrosymmetric nature, CMOS-compatible materials including silicon (Si) and germanium (Ge) traditionally do not possess the χ(2) response. Recently, second-harmonic generation (SHG) that requires the χ(2) response was reported in Ge, but no attempts at enhancing the SHG signal have been conducted and proven experimentally. Herein, we demonstrate the effect of strain on SHG from Ge by depositing a silicon nitride (Si3N4) stressor layer on Ge-on-insulator (GOI) microdisks. This approach allows the deformation of the centrosymmetric unit cell structure of Ge, which can further enhance the χ(2) nonlinear susceptibility for SHG emission. The experimental observation of SHG under femtosecond optical pumping indicates a clear trend of enhancement in SHG signals with increasing strain. Such improvements boost conversion efficiencies by 300% when compared to the control counterpart. This technique paves the way toward realizing a CMOS-compatible material with nonlinear characteristics, presenting unforeseen opportunities for its integration in the semiconductor industry.
URI: https://hdl.handle.net/10356/170080
ISSN: 0146-9592
DOI: 10.1364/OL.497741
Schools: School of Electrical and Electronic Engineering 
Rights: © 2023 Optica Publishing Group. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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