Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/171734
Title: High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: toward micro light-emitting diodes
Authors: Baril, Kilian
Coulon, Pierre-Marie
Mrad, Mrad
Labchir, Nabil
Feuillet, Guy
Charles, Matthew
Gourgon, Cécile
Vennéguès, Philippe
Zúñiga-Pérez, Jesús
Alloing, Blandine
Keywords: Science::Physics
Issue Date: 2023
Source: Baril, K., Coulon, P., Mrad, M., Labchir, N., Feuillet, G., Charles, M., Gourgon, C., Vennéguès, P., Zúñiga-Pérez, J. & Alloing, B. (2023). High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: toward micro light-emitting diodes. Journal of Applied Physics, 133(24), 245702-1-245702-8. https://dx.doi.org/10.1063/5.0149882
Journal: Journal of Applied Physics 
Abstract: In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm2 GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars etched into a silicon-on-insulator substrate. Our approach takes advantage of the creeping properties of SiO2 at the usual GaN epitaxial growth temperature, allowing the GaN crystallites to align and reduce the grain boundary dislocations. Furthermore, this bottom-up approach allows to get rid of the dry plasma etching step for μLEDs fabrication, which highly deteriorates sidewalls, reducing the efficiency of future displays. By optimizing the growth conditions and inducing asymmetric nucleation, a TDD of 2.5 × 108 cm−2 has been achieved on the GaN platelets, while keeping a smooth surface.
URI: https://hdl.handle.net/10356/171734
ISSN: 0021-8979
DOI: 10.1063/5.0149882
Schools: School of Physical and Mathematical Sciences 
Research Centres: MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d’Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore, Singapore
Rights: © 2023 Author(s). Published under an exclusive license by AIP Publishing. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1063/5.0149882
Fulltext Permission: embargo_20240629
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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