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Title: Two quasi-interfacial p-n junctions observed by a dual-irradiation system in perovskite solar cells
Authors: Omer, Mohamed I.
Ye, Tao
Li, Xianqiang
Ma, Shaoyang
Wu, Dan
Wei, Lei
Tang, Xiaohong
Ramakrishna, Seeram
Zhu, Qiang
Xiong, Shanxing
Xu, Jianwei
Vijila, Chellappan
Wang, Xizu
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2023
Source: Omer, M. I., Ye, T., Li, X., Ma, S., Wu, D., Wei, L., Tang, X., Ramakrishna, S., Zhu, Q., Xiong, S., Xu, J., Vijila, C. & Wang, X. (2023). Two quasi-interfacial p-n junctions observed by a dual-irradiation system in perovskite solar cells. Npj Flexible Electronics, 7(1), 1-9.
Project: A19D9a0096 
Journal: npj Flexible Electronics 
Abstract: In general, perovskite solar cells (PSC) with a sensitized or thin-film architecture absorb light from a single-side illumination, and carrier separation and transport only take place inside the active layer of the perovskite film. Herein, we demonstrated a dual-irradiation PSC system in which light passes through both the fluorinated tin oxide (FTO) side and the Au electrode side, resulting in much faster interfacial charge carrier extraction and transportation than that in a single-irradiation system, in which light passes through from either the FTO or semitransparent Au electrode side. This dual-irradiation PSC system with a configuration of FTO/Cl-TiO2/Mp-TiO2/mixed perovskite/spiro-OMeTAD/Au/ITO can form two quasi-interfacial p-n junctions, which occur separately at the interfaces of TiO2/perovskite and perovskite/spiro-OMeTAD. When the PSC device was illuminated simultaneously from both the FTO and Au/ITO sides, the PSC achieved a total power conversion efficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), which is higher than PCE (18.4%) of a single-irradiation system. The time of flight (TOF) photoconductivity, small perturbation transient photovoltaic (TPV), finite-difference time-domain (FDTD) optical simulations, and dual illumination-side-dependent impedance spectroscopy (ISD-IS) were used to authenticate the presence of two quasi-interfacial p-n junctions in the PSC, creating more charge carriers than only one quasi p-n junction, and thus leading to a fast recombination process.
ISSN: 2397-4621
DOI: 10.1038/s41528-023-00256-1
Schools: School of Electrical and Electronic Engineering 
Organisations: Institute of Materials Research and Engineering, A*STAR 
Rights: © 2023 The Author(s). Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://
Fulltext Permission: open
Fulltext Availability: With Fulltext
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