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|Title:||Design and simulation of silicon optoelectronic integrated circuits||Authors:||Win, Khine Thandar.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2009||Abstract:||Advances in optical data storage technology have been so rapid over the past several decades for a wide range of PC and consumers electronics applications. In this new millennium, the BD (blu-ray disc) technology, the next generation to CD and DVD, using blue laser light (405nm) was introduced recently. BD technology is superior to first two generations for its higher storage capacity, usability for data storage and high-definition content delivery and backward compatibility. A main component of the blu-ray disc system, the optical pick-up unit (OPU), requires a PDIC (photodetector integrated circuit) consisting of photodetector and preamplifier. In this final year project, two main components of PDIC used in optical pick-up unit of blu-ray disc system, photodiodes and preamplifiers consisting of transimpedance amplifier(TIA) and limiting amplifier(LA), has been designed and simulated. During the project, the student learned the overview of optical storage device systems and theory of transimpedance amplifier and limiting amplifier and design and process of photodiodes. The TIA and LA have been designed using the TSMC 0.18 um CMOS technology in the Cadence Virtuoso Custom Design Platform. A bandwidth of TIA is larger than 2.02 GHz and a gain of 77dB have been achieved, and after integrated with limiting amplifier, the bandwidth is around 10GHz and the output voltage has reached to more than hundreds with the input current signal of about 1uA. After that, the fabrication ready layout of TIA circuit with photodiodes and metal pads and limiting amplifier circuit have also been generated. Besides, the various designs of photodiodes are designed and simulated in Taurus Tsuprem4 and Medici. The complete fabrication steps have been simulated with the variation in process parameters and device structures. Furthermore, the current-voltage behaviors, transient behavior and frequency response have also been obtained from device simulation. The effects of substrate doping and device structure have been studied. The suggested improvements and works are also provided for the further development.||URI:||http://hdl.handle.net/10356/17475||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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