Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/17583
Title: Photoluminescence and photoluminescence excitation study of semiconductor materials
Authors: Ngian, Jin Shun.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2009
Abstract: Semiconductor materials are very important in modern optoelectronics and microelectronics applications. These applications demand a better understanding of the fundamental properties of semiconductors and the optimization of growth and post-growth process. Consequently a variety of characterization techniques which are sensitive to various physical properties are needed. Photoluminescence (PL) and photoluminescence excitation (PLE) is one of those techniques. Through the study of PL and PLE spectra, the quality of material, and important material parameters, such as, the band gap for bulk material and the effective band gap for semiconductor quantum well can be extracted. In this final year project, the author will be able to learn the working principle of PL and PLE, gain hands-on experience on how to operate the PL and PLE system, measure and analyze the PL and PLE spectra of GaAs and GaInNAs semiconductor quantum wells.
URI: http://hdl.handle.net/10356/17583
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
e6030.pdf
  Restricted Access
9.97 MBAdobe PDFView/Open

Page view(s) 50

247
checked on Sep 26, 2020

Download(s) 50

11
checked on Sep 26, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.