Perovskite-based thin film transistors

Abstract

Perovskite-based electronic devices have gained a significant attention as of late, as perovskite-based devices has showed promising optoelectronic properties, low-cost of fabrication processes, and performance characteristics. This project explores into the many variants of perovskite materials, focusing on the commonly used MAPbI3 as well as new variants such as the triple cation compositions. Additionally, integrating the use of Carbon Direct Ink Writing (DIW) electrodes on said electronic devices. With thin film transistors (TFT) being the favoured platform for perovskite transistor fabrication due to the flexibility of configurations, low-cost of fabrication, tuneable properties, and ease of integration. Understanding the effects between the material properties, device structures and operating parameters of both the already well established MAPbI3 perovskites and the emerging triple cation composition perovskites will play an essential role for advancing perovskite-based TFT devices. Despite challenges such as stability under ambient conditions and scalability of production processes, continuous research efforts in material synthesis, device engineering, and operating condition optimization underscore the importance of studying perovskite-based electronic devices. Their potential to revolutionize the electronics industry by enabling cost-effective and high-performance devices makes them a compelling area of scientific inquiry and technological development. This project aims to highlight the significance of considering operating conditions in conjunction with material and device design in advancing perovskite-based transistors and optoelectronic technologies, encouraging further exploration and innovation in this exciting field.