Conductive bridge random access memory

Abstract

As technology are consistently improving at a very fast rate over the years, current technologies are not able to continue supporting the high demands of specification for the newly developed applications due to lacking in terms of speed and storage density. As a result, the requirements for the establishment of advance memory technologies and computational system for efficient computing with larger storage density are tremendous. The need of doing in-depth research on the advance technologies is then becoming increasingly necessary. A study of the characteristics and functionality of Conductive-Based Resistive Random Access Memory (CBRAM) will be presented. The device is a metal-insulator-metal (MIM) structure with the materials used being silver (Ag) as active electrode, titanium nitride and germanium suldfide (TiN/GeS) as switching layer, and platinum (Pt) as counter electrode.