Conductive bridge resistive random access memory (CBRAM)

Abstract

Modern computer architecture incorporates three principal memory technologies: DRAM, SRAM, and Flash memory. However, due to the scaling limitation of charge-based memory technologies, emerging memory technologies are looking to replace these conventional memory technologies by introducing a new storage class memory (SCM). It combines the high speed and endurance characteristics of DRAM with the non-volatility of Flash Memory, which is urgently needed to fulfill the computing needs of this internet-of-things era. Conductive bridge random access memory (CBRAM) stands out as one of the most promising candidates for future memory technology, which relies on the migration of metal ions and subsequent redox reactions. Its appeal lies in its low operating voltage, minimal energy consumption, exceptional scalability, large memory window, and versatile switching characteristics.

Our main objective is to enhance our comprehension of the operating principle and performance characteristics through various tests, such as current-voltage measurement and direct current (DC) endurance, while simultaneously striving to enhance its overall reliability. In this final year project (FYP), device characterization of Ag/GeTe/GeS/Pt-CBRAM device is extensively studied. Therefore, this report delves into an extensive literature review encompassing the different memory technologies, offering comprehensive insights into their respective operating principles and performance characteristics. Additionally, it explains the experimental methodologies employed in conducting the tests, providing detailed explanations of the procedures and setups utilized. Furthermore, this report analyses and discusses the outcomes of these tests, deriving insightful conclusions regarding the device behavior and performance of the tested devices.