2D material platform for overcoming the amplitude-phase tradeoff in ring resonators

Abstract

Compact and high-speed electro-optic phase modulators play a vital role in various large-scale applications including optical computing, quantum and neural networks, and optical communication links. Conventional electro-refractive phase modulators such as silicon (Si), III-V and graphene on Si suffer froma fundamental tradeoff between device length and optical loss that limits their scaling capabilities. High-finesse ring resonators have been traditionally used as compact intensity modulators, but their use for phase modulation has been limited due to the high insertion loss associated with the phase shift. Here, we show that high-finesse resonators can achieve a strong phase shift with low insertion loss by simultaneous modulation of the real and imaginary parts of the refractive index, to the same extent, i.e., Δn/Δk1. To implement this strategy, we demonstrate an active hybrid platformthat combines a low-loss SiN ring resonator with 2D materials such as graphene and transition metal dichalcogenide [tungsten disulphide (WSe2)], which induces a strong change in the imaginary and real parts of the index. Our platform consisting of a 25 μm long Gr-Al2O3-WSe2 capacitor embedded on a SiN ring of 50 μm radius (~8% ring coverage) achieves a continuous phase shift of .0.46-0.05/π radians with an insertion loss (IL) of 3.18±0.20 dB and a transmission modulation (ΔTRing) of 1.72-0.15 dB at a probe wavelength (λp) of 1646.18 nm. We find that our Gr-Al2O3-WSe2 capacitor exhibits a phase modulation efficiency (Vπ/2· L) of 0.530±0.016 V · cm and can support an electro-optic bandwidth of 14.9-0.1 GHz. We further show that our platform can achieve a phase shift of π radians with an IL of 5 dB and a minimum ΔT of 0.046 dB.We demonstrate the broadband nature of the binary phase response, by measuring a phase shift of .1.00±0.10/π radians, with an IL of 5.20±0.31 dB and a minimalΔTRing of 0.015±0.006 dB for resonances spanning from1564 to 1650 nm. This SiN-2D hybrid platform provides the design for compact and high-speed reconfigurable circuits with graphene and transition metal dichalcogenide (TMD) monolayers that can enable large-scale photonic systems.