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|Title:||Schottky diodes using GaN-based semiconductors : application to next generation mobile communications||Authors:||Leow, Kee Sing.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2009||Abstract:||The continuous progress of microelectronic technologies together with developments in III-V technology has sustained the semiconductors growth for many years. Therefore, Schottky diodes using GaN-based semiconductors are of great interest of the application to next generation mobile communications. In this application, GaN technology serves to increase the power and frequency of the transistors. A brief introduction of the operation of Schottky diode and III-V nitride are presented. Fabrication procedures of the GaN diodes on silicon and sapphire substrates are also illustrated in this report. Thus, this report shall investigate on the growth of GaN on sapphire and silicon substrates as well as deposition of various metals such as Titanium (Ti), Nickel (Ni), Aluminum (Al) and Gold (Au) in order to achieve high power and high frequency devices using Electron-Beam Evaporation techniques respectively. Molecular Beam Epitaxy (MBE) method is used to grow GaN on the substrate. After fabrication of devices, methods to characterize the devices are carried out. Two methods were used to characterize the devices which are Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. Results are analyzed for the ideality factor and barrier height of the devices. Therefore, I-V characteristics of the devices as a function of diode and temperature are presented. Barrier height and ideality factor as a function of temperature as well as a function of thermal annealing of devices will be discussed in this report.||URI:||http://hdl.handle.net/10356/17872||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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Updated on Dec 5, 2020
Updated on Dec 5, 2020
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