Please use this identifier to cite or link to this item:
|Title:||Studies on high frequency performance of advanced Si MOSFETs||Authors:||Sun, Zhiyong.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2009||Abstract:||This final year project studied degradation mechanisms contributing to the increased high frequency noise of deep-submicrometer nMOSFETs after different hot-carrier (HC) stresses. An HP4156B semiconductor parameter analyzer was used for dc measurement and HC stress. Three groups of devices were stressed for RF noise characterization. Hot carrier stresses with drain avalanche hot carrier stress (Vgs = 1.5 V, Vds = 3 V), channel hot electron stress (Vgs = 1.5 V, Vds = 3 V) and hot hole injection (Vgs = 0.4 V, Vds = 3 V) were carried out respectively to investigate the degradation mechanisms of high frequency noise. It is demonstrated that device noise parameters, such as NFmin and Rn degraded most under maximum substrate-current (IB,max) stress. However, hot electron stress and hot hole injection has much lower degradation on device noise performance. The high frequency noise degradation is found mainly attributed to the additional channel noise associated with HC induced interface traps.||URI:||http://hdl.handle.net/10356/17951||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.