Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/17999
Title: Double-gated CNTFETs with Al2O3/Si3N4 as gate dielectrics
Authors: Fan, Yu
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2009
Abstract: This report focuses on fabrication and investigation of double-gated Carbon Nanotube Field-Effect-Transistors (CNTFETs) in which both partial top gate and global back gate are fabricated on the same device. Two design structures were fabricated to compare improvements of high K dielectric material on the performance of the devices: the first structure uses Si3N4 as partial top gate dielectric while the second structure employs high K material- Al2O3 as partial top gate dielectric. To further improve device structure, the second design was fabricated on transparent substrate so that once the structure is successfully realized it can be further improved to form a rounded-partial top gate structure in which the partial top gate is expected to have higher controllability over the carbon nanotube channel.
URI: http://hdl.handle.net/10356/17999
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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