Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/18020
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dc.contributor.authorTan, Eugene ZhiWei.-
dc.date.accessioned2009-06-18T09:01:09Z-
dc.date.available2009-06-18T09:01:09Z-
dc.date.copyright2009en_US
dc.date.issued2009-
dc.identifier.urihttp://hdl.handle.net/10356/18020-
dc.description.abstractEfforts to improve the optical performance of the indirect bandgap semiconductor silicon (Si) has been a major subject of research in the field of silicon photonics due to the promising applications of silicon based light emitters and detectors for optical communication. A simulation on the silicon-tin alloy was done in the search for a more effective material for use in photonics. An understanding of the individual silicon and tin material is needed to deduce what are the effects of adding tin to silicon. Vienna ab initio Simulation Package (VASP), which employs first principles, was used to calculate the electronic parameters such as equilibrium lattice constant, band energies and effective mass of silicon and tin. The Luttinger parameters for silicon and tin were also calculated based on the results obtained from VASP. However, VASP was not able to provide accurate calculations for tin. Hence, the effective mass and Luttinger parameters of the silicon-tin alloy were not calculated. The short comings of the VASP were also highlighted as a result of this project.en_US
dc.format.extent186 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University-
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleElectronic structures study of silicon, tin and their alloyen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorFan Weijunen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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