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https://hdl.handle.net/10356/180270| Title: | Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique | Authors: | Zhuang, Yihao Ranjan, Kumud Xie, Qingyun Xie, Hanlin Li, Hanchao Wang, Yue Liu, Siyu Ng, Geok Ing |
Keywords: | Computer and Information Science Engineering Physics |
Issue Date: | 2024 | Source: | Zhuang, Y., Ranjan, K., Xie, Q., Xie, H., Li, H., Wang, Y., Liu, S. & Ng, G. I. (2024). Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique. 12th International Workshop on Nitride Semiconductors (IWN 2024). | Project: | M21K6b0134 M23WSNG001 |
Conference: | 12th International Workshop on Nitride Semiconductors (IWN 2024) | Abstract: | This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB). | URI: | https://hdl.handle.net/10356/180270 | URL: | https://www.iwn2024.org/home https://multisite.ncscale.ncsu.edu/sandbox/wp-content/uploads/sites/18/2024/11/IWN-2024-Program.pdf |
Schools: | Interdisciplinary Graduate School (IGS) School of Electrical and Electronic Engineering |
Organisations: | National GaN Technology Centre, A*STAR Institute of Microelectronics, A*STAR Singapore-MIT Alliance for Research and Technology |
Research Centres: | Energy Research Institute @ NTU (ERI@N) | Rights: | © 2024 IWN. All rights reserved.This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | ERI@N Conference Papers |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IWN Conference_Yihao_06_NGI.pdf | Poster | 591.12 kB | Adobe PDF |  View/Open |
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