Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/180538
Title: Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
Authors: Liu, Siyu
Zhuang, Yihao
Li, Hanchao
Xie, Qingyun
Wang, Yue
Xie, Hanlin
Ranjan, Kumud
Ng, Geok Ing
Keywords: Engineering
Physics
Issue Date: 2024
Source: Liu, S., Zhuang, Y., Li, H., Xie, Q., Wang, Y., Xie, H., Ranjan, K. & Ng, G. I. (2024). Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si. Applied Physics Letters, 125(2), 023504-. https://dx.doi.org/10.1063/5.0219359
Project: M22L3a0112 
M23WSNG001 
Journal: Applied Physics Letters 
Abstract: This work investigates the off-state leakage characteristics of AlN/GaN/AlGaN high electron mobility transistors (HEMTs) on Si substrate with varying mesa depths and uncovers the existence of a parasitic channel associated with the AlGaN back barrier. Significant differences in off-state leakage up to three orders of magnitude were observed between devices fabricated using different mesa depths. The electrical properties of AlN/GaN/AlGaN HEMTs were measured, and it was found that there is a N-type parasitic channel in the unintentionally doped AlGaN back-barrier. Analysis of the isolation test structure, which retains this parasitic channel, reveals a buffer leakage of 12.8 mA/mm and a sheet resistance of 7739.1 Ω/sq, as a result of the parasitic channel. The depletion electric field strength of the parasitic channel is 3.2 × 105 V/cm. Temperature-dependent I-V curves obtained from the isolation area affirm that the primary leakage mechanism is two-dimensional variable range hopping along the sidewall. As the isolation distance extends from 3 to 5 μm, the slope of the fitting line decreases from −53.14 to −126.11 due to increased resistance.
URI: https://hdl.handle.net/10356/180538
ISSN: 0003-6951
DOI: 10.1063/5.0219359
Schools: School of Electrical and Electronic Engineering 
Organisations: National GaN Technology Centre, A*STAR 
Institute of Microelectronics, A*STAR 
Singapore-MIT Alliance for Research and Technology 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Rights: © 2024 The Author(s). All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1063/5.0219359.
Fulltext Permission: embargo_20250718
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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