Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/180679
Title: Ultrahigh electromechanical response from competing ferroic orders
Authors: Lin, Baichen
Ong, Khuong Phuong
Yang, Tiannan
Zeng, Qibin
Hui, Hui Kim
Ye, Zhen
Sim, Celine
Yen, Zhihao
Yang, Ping
Dou, Yanxin
Li, Xiaolong
Gao, Xingyu
Tan, Ivan Chee Kiang
Lim, Zhi Shiuh
Zeng, Shengwei
Luo, Tiancheng
Xu, Jinlong
Tong, Xin
Li, Patrick Wen Feng
Ren, Minqin
Zeng, Kaiyang
Sun, Chengliang
Ramakrishna, Seeram
Breese, Mark B. H.
Boothroyd, Chris
Lee, Chengkuo
Singh, David J.
Lam, Yeng Ming
Liu, Huajun
Keywords: Engineering
Issue Date: 2024
Source: Lin, B., Ong, K. P., Yang, T., Zeng, Q., Hui, H. K., Ye, Z., Sim, C., Yen, Z., Yang, P., Dou, Y., Li, X., Gao, X., Tan, I. C. K., Lim, Z. S., Zeng, S., Luo, T., Xu, J., Tong, X., Li, P. W. F., ...Liu, H. (2024). Ultrahigh electromechanical response from competing ferroic orders. Nature, 633(8031), 798-803. https://dx.doi.org/10.1038/s41586-024-07917-9
Project: NRF-CRP28-2022-0002 
M22K2c0084 
C210812020 
Journal: Nature 
Abstract: Materials with electromechanical coupling are essential for transducers and acoustic devices as reversible converters between mechanical and electrical energy1-6. High electromechanical responses are typically found in materials with strong structural instabilities, conventionally achieved by two strategies-morphotropic phase boundaries7 and nanoscale structural heterogeneity8. Here we demonstrate a different strategy to accomplish ultrahigh electromechanical response by inducing extreme structural instability from competing antiferroelectric and ferroelectric orders. Guided by the phase diagram and theoretical calculations, we designed the coexistence of antiferroelectric orthorhombic and ferroelectric rhombohedral phases in sodium niobate thin films. These films show effective piezoelectric coefficients above 5,000 pm V-1 because of electric-field-induced antiferroelectric-ferroelectric phase transitions. Our results provide a general approach to design and exploit antiferroelectric materials for electromechanical devices.
URI: https://hdl.handle.net/10356/180679
ISSN: 0028-0836
DOI: 10.1038/s41586-024-07917-9
Schools: School of Materials Science and Engineering 
Organisations: Institute of Materials Research and Engineering, A*STAR 
Research Centres: Facility for Analysis, Characterisation, Testing and Simulation
Rights: © 2024 The Author(s). Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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