Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/181249
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJiang, Yilinen_US
dc.contributor.authorSu, Binen_US
dc.contributor.authorYu, Jinchengen_US
dc.contributor.authorHan, Zhanranen_US
dc.contributor.authorHu, Haihuaen_US
dc.contributor.authorZhuang, Hua-Luen_US
dc.contributor.authorLi, Hezhangen_US
dc.contributor.authorDong, Jinfengen_US
dc.contributor.authorLi, Jing-Weien_US
dc.contributor.authorWang, Chaoen_US
dc.contributor.authorGe, Zhen-Huaen_US
dc.contributor.authorFeng, Jingen_US
dc.contributor.authorSun, Fu-Huaen_US
dc.contributor.authorLi, Jing-Fengen_US
dc.date.accessioned2024-11-19T04:13:18Z-
dc.date.available2024-11-19T04:13:18Z-
dc.date.issued2024-
dc.identifier.citationJiang, Y., Su, B., Yu, J., Han, Z., Hu, H., Zhuang, H., Li, H., Dong, J., Li, J., Wang, C., Ge, Z., Feng, J., Sun, F. & Li, J. (2024). Exceptional figure of merit achieved in boron-dispersed GeTe-based thermoelectric composites. Nature Communications, 15(1), 5915-. https://dx.doi.org/10.1038/s41467-024-50175-6en_US
dc.identifier.issn2041-1723en_US
dc.identifier.urihttps://hdl.handle.net/10356/181249-
dc.description.abstractGeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 Wm-1K-1 at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcm-1K-2 at 300 K). Consequently, we obtain a maximum figure of merit Zmax of 4.0 × 10-3 K-1 at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.en_US
dc.language.isoenen_US
dc.relation.ispartofNature Communicationsen_US
dc.rights© 2024 The Author(s). Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/ licenses/by/4.0/.en_US
dc.subjectEngineeringen_US
dc.titleExceptional figure of merit achieved in boron-dispersed GeTe-based thermoelectric compositesen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1038/s41467-024-50175-6-
dc.description.versionPublished versionen_US
dc.identifier.pmid39003277-
dc.identifier.scopus2-s2.0-85198359514-
dc.identifier.issue1en_US
dc.identifier.volume15en_US
dc.identifier.spage5915en_US
dc.subject.keywordsTransmission electron microscopyen_US
dc.subject.keywordsThermal conductivityen_US
dc.description.acknowledgementJ.F.L., Y.L.J., B.S., J.C.Y., Z.R.H., J.F.D., H.L.Z., H.Z.L., H.H.H., J.W.L., J.F., F.H.S., Z.H.G. and C.W. acknowledge the National Key R&D Program of China (2023YFB3809400) and the Basic Science Center Project of National Natural Science Foundation of China (grant no. 52388201).en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
Appears in Collections:MSE Journal Articles
Files in This Item:
File Description SizeFormat 
s41467-024-50175-6.pdf2.57 MBAdobe PDFThumbnail
View/Open

SCOPUSTM   
Citations 50

8
Updated on Feb 14, 2025

Page view(s)

46
Updated on Feb 15, 2025

Download(s)

7
Updated on Feb 15, 2025

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.