Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/181748
Title: Self-powered graphene-silicon photodetectors with hBN passivation
Authors: Low, Kelly Khe Li
Keywords: Engineering
Issue Date: 2024
Publisher: Nanyang Technological University
Source: Low, K. K. L. (2024). Self-powered graphene-silicon photodetectors with hBN passivation. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/181748
Project: P2018-231 
Abstract: Photodetectors are emerging technologies used in telecommunications, optoelectronics, and sensing. Significant research has been conducted on improving the performance of Silicon (Si)- based optoelectronic devices such as photodetectors and solar cells. Typically, conventional photodetectors require an external voltage for operation, necessitating large packaging to accommodate the operating circuit. In contrast, Self-powered photodetector can operate without requiring an external energy source, offering significantly benefit emerging technologies like the Internet of Things (IoT), autonomous systems, and wearable devices. Therefore, the development of self-powered photodetector is crucial for reducing power consumption in devices, and it shows promise as a tool that can drive economic and technical growth and improve human lives
URI: https://hdl.handle.net/10356/181748
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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