Effects of co-doping the SnO2 electron transport layer with boron and indium on the photovoltaic performance of planar perovskite solar cells

Abstract

We have used a solution-based approach to incorporate boron (B) and indium (In) dopants into the conventional SnO2 electron transport layer (ETL) to create high-performing planar perovskite solar cells (PSCs). By adding B and In in precise stoichiometric ratios to the standard SnO2 precursor solution, we achieved a PCE of 20.05% compared to the PCE of 18.36% seen in devices having an undoped SnO2 ETL. The addition of BIn to the SnO2 ETL resulted in enhanced transparency and conductivity, resulting in higher current density (Jsc) and fill factor (FF) in PSCs. Furthermore, due to the improved energy level alignment and lower work function of BIn-SnO2, higher Voc is also observed. Furthermore, the long-term stability of PSCs is significantly improved with the incorporation of the BIn-doped SnO2 ETL.