The study and design of broadband mmWave low noise amplifier based on GaN

Abstract

The next generation of communication systems, such as 5G and 6G, necessitates advancements in transceiver technology. Within the radio frequency front-end of the transceiver, the core circuit module is the low noise amplifier (LNA). To keep pace with the rapid development of high performance millimeter-wave 5G communication technology, LNAs must be designed with wide bandwidth, low noise figure, high linearity, and compact form factors. As a promising alternative to CMOS technology, GaN High Electron Mobility Transistors (HEMTs) offer superior RF performance due to their inherent properties as third-generation wide bandgap semiconductors. GaN HEMTs provide higher linearity and robustness, along with comparable noise figures and transconductance to GaAs-based transistors, which are advantageous for developing high performance LNAs. This thesis presents the design of two GaN LNAs based on 100 nm and 150 nm GaN HEMT processes, focusing on noise, bandwidth, stability, and linearity as key design objectives. The thesis reviews fundamental RF theory and LNA design topologies, followed by a detailed design process, including schematic design, simulation, post-layout design, and simulation. The simulation results successfully meet the design goals, and the analysis offers insights for further enhancing circuit performance.