Research and simulation of a novel SGT MOSFET

Abstract

The advent of Split Gate MOSFET (SGT) technology marks a significant advancement in the field of power electronics, characterized by its unique architecture that efficiently manages the trade-offs between performance and thermal stability. This paper presents a comprehensive study on the design, operation, and application of Split Gate MOSFETs, which incorporate a split gate configuration to enhance gate control over the channel, reducing threshold voltage while maintaining high switching speed. A comparative investigation between SGT and their conventional counterparts highlights enhancements in power efficiency, reduced power loss, and superior thermal management. The findings indicate that the optimized design of SGT can lead to significant improvements in applications spanning from power converters to high-frequency RF devices. Utilizing Under-SGT Hk-pillars as a promising alternative for enhancing the performance of MOSFETs has been proposed. This innovative structure facilitates effective charge balancing through the formation of a heterojunction (Hk) superjunction (SJ) configuration. A key advantage of this approach is the ability to achieve higher doping concentrations in the n-pillar, which negates the necessity for a p-pillar, thereby enhancing breakdown voltage (BV) without compromising the specific on-resistance (Ron,sp). Consequently, this design leads to superior overall performance while simplifying the fabrication process. Furthermore, the absence of parasitic bipolar junction transistors (BJTs) significantly mitigates the risks of latch-up and premature breakdown. Overall, we anticipate that the incorporation of Under-SGT Hk-pillars in MOSFETs will result in higher breakdown voltage, improved power density, and reduced complexities in the manufacturing process.