Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/18329
Title: Memory properties of carbon nanotube field effect transistor (CNTFET)
Authors: Toh, Teck Kiong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2009
Abstract: This report focuses on the fabrication and investigation of memory properties of carbon Nanotube field effect transistor (CNTFET). The literature review about Carbon Nanotube (CNTs) is given to introduce this new technology. Another three literature reviews about Memory are given to introduce the CNT memory technology. Its related concepts such as hysteresis, read/write operations and annealing effect are discussed. To know the procedures of using fabrication equipments such as E-Beam Physical Vapor Deposition (B-Beam PVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), and characterization equipments such as HP4156B Analyzer is crucial in order for the experiment to proceed on smoothly. The procedures are discussed with explanations. Fabrication of the memory devices is an important part of the project. Two batches of memory devices are fabricated, with different tunnelling dielectric layer. The mechanism in fabricating the memory devices has been studied in detail to understand the building structure of memory devices better. Characterization test of memory devices is another major part in this report. Characterization has been done on the memory devices. Results of transfer characteristics curves and memory charging/discharging effects are investigated and discussed in detail to understand the capabilities and potential of CNT memory devices.
URI: http://hdl.handle.net/10356/18329
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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