Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/18980
Title: Investigation of new materials for fast speed phase-change random access memory
Authors: Law, Minghui
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
Issue Date: 2009
Abstract: Phase Change Random Access Memory (PCRAM) has shown to have the most potential over other types of emerging non-volatile memories to become an alternative to FLASH memories. However, several problems regarding its practical use still remain. In this project, studies to increase the life time of the PCRAM through insertion of a diffusion barrier were performed. Germanium nitride (GeN) with 45.05 at% nitrogen had shown excellent properties as a diffusion barrier and had been incorporated into the PCRAM cell structure to investigate its device performance. GeN films with high nitrogen content showed excellent thermal stability, good RMS surface roughness and high electrical resistivity and these are important parameters for the PCRAM device.
URI: http://hdl.handle.net/10356/18980
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
Law_Minghui.pdf
  Restricted Access
1.61 MBAdobe PDFView/Open

Page view(s)

198
Updated on Nov 26, 2020

Download(s) 10

3
Updated on Nov 26, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.