Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19083
Title: Filtered cathodic vacuum arc deposition of metal nitrides
Authors: Ji, Xiaohong
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2006
Source: Ji, X. (2006). Filtered cathodic vacuum arc deposition of metal nitrides. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The numerous applications of group III nitride semiconductors have attracted significant research interest over the last decade. A novel ion-beam assisted filtered cathodic vacuum arc (I-FCVA) technique has been developed to fabricate III nitrides using pure metallic target as metal source. For the first time, FCVA technique is capable of handling low melting point metal target such as Ga and In. Binary III nitrades (AIN, GaN, InN) on Si subtrates have been fabricated, characterized and analyzed.
URI: https://hdl.handle.net/10356/19083
DOI: 10.32657/10356/19083
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
JI_XIAOHONG_2006.pdf16.2 MBAdobe PDFThumbnail
View/Open

Page view(s) 20

476
Updated on May 12, 2021

Download(s) 20

147
Updated on May 12, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.