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|Title:||Report on industrial attachment with Nanophotonics and Electronic Integration Group Data Storage Institute, Singapore||Authors:||Koustuban Ravi.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2008||Abstract:||Photonic Integrated Circuits (PIC) promise THz speeds as compared to the GHz speeds offered by electronic circuits. The design of optoelectronic/photonic devices is challenged by the complexity of light interaction with semiconductor media. Irregular device geometries complicate matters further making analytical methods limited in their use. In the wake of these challenges, a need for accurate modeling arises. In this project, the Finite Domain Time Difference (FDTD) method was used to investigate optoelectronic devices with a special focus on passively mode locked semiconductor lasers. The current FDTD model employed is seen to model the physics of such complex devices with high accuracy while remaining computationally efficient. Simulation results for mode locked lasers considering electronic band structure, thermal and band filling effects are obtained for the first time.||URI:||http://hdl.handle.net/10356/19158||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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