dc.contributor.authorKumta Amit Sudhakar
dc.date.accessioned2009-11-16T05:57:29Z
dc.date.accessioned2017-07-23T08:32:33Z
dc.date.available2009-11-16T05:57:29Z
dc.date.available2017-07-23T08:32:33Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationKumta Amit Sudhakar. (2009). Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/19273
dc.description.abstractIn recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO2. Schottky barrier diodes (SBDs) based on 4H-SiC offer superior dynamic performance (<20 nC reverse recovery charge for a 1200 V, 1A SBD), almost 100 times lower specific-on resistance compared to Si SBDs and PiN diodes. The higher bandgap results in much higher schottky barrier height compared to Si and GaAs resulting in extremely low leakage currents even at elevated temperatures (>300oC operation).en_US
dc.format.extent193 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materialsen_US
dc.titleDevelopment of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodesen_US
dc.typeThesis
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorRuslien_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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