Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19328
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dc.contributor.authorSeah, Chin Hwee.-
dc.date.accessioned2009-12-08T03:34:01Z-
dc.date.available2009-12-08T03:34:01Z-
dc.date.copyright2000en_US
dc.date.issued2000-
dc.identifier.urihttp://hdl.handle.net/10356/19328-
dc.description.abstractAn in-depth study of the copper electroplating process was carried out with different process parameters such as seed materials, current densities and electrolytes in order to fabricate nanocrystalline electroplated copper to fill up the line and via trenches in sub-0.25 urn devices. The effect of annealing on the morphology and properties of the electroplated copper was also investigated.en_US
dc.format.extent169 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Scienceen_US
dc.titleElectroplating of copper for application in sub-0.25 micron device manufacturingen_US
dc.typeThesis-
dc.contributor.schoolSchool of Applied Scienceen_US
dc.description.degreeMaster of Applied Scienceen_US
dc.contributor.supervisor2S.Mridhaen_US
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