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Title: Thin dielectric films with low dielectric constants for quarter micron devices
Authors: Chua, Chee Tee.
Keywords: DRNTU::Engineering::Materials
Issue Date: 1999
Abstract: The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vapour deposition (CVD) techniques. Characterisation of low k films is important to IC manufacturing as it also enhances the development of new low k materials that are more promising than conventional SiO2.
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:SAS Theses

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