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|Title:||Growth, fabrication and characterisation of GaAs and InP-based HEMT structures||Authors:||Zheng, Hai Qun.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||1997||Abstract:||This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux ratio, substrate temperature and growth interruptions. It was found that using lower As flux, lower substrate temperature during 8-doping and proper growth interruption before and after the channel layer will result in better material quality in terms of higher 2DEG mobility. Conventional 8-doped P-HEMT samples were successfully grown with the mobility of 5860 cm2/v.s at a 2DEG concentration of 2.28 x 10'2cm-2.||URI:||http://hdl.handle.net/10356/19601||Rights:||NANYANG TECHNOLOGICAL UNIVERSITY||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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