Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19601
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dc.contributor.authorZheng, Hai Qun.en_US
dc.date.accessioned2009-12-14T06:17:32Z-
dc.date.available2009-12-14T06:17:32Z-
dc.date.copyright1997en_US
dc.date.issued1997-
dc.identifier.urihttp://hdl.handle.net/10356/19601-
dc.description.abstractThis thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux ratio, substrate temperature and growth interruptions. It was found that using lower As flux, lower substrate temperature during 8-doping and proper growth interruption before and after the channel layer will result in better material quality in terms of higher 2DEG mobility. Conventional 8-doped P-HEMT samples were successfully grown with the mobility of 5860 cm2/v.s at a 2DEG concentration of 2.28 x 10'2cm-2.en_US
dc.format.extent120 p.-
dc.language.isoen-
dc.rightsNANYANG TECHNOLOGICAL UNIVERSITYen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials-
dc.titleGrowth, fabrication and characterisation of GaAs and InP-based HEMT structuresen_US
dc.typeThesisen_US
dc.contributor.supervisorK Radhakrishnanen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
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