Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19674
Title: Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
Authors: Miao, Yubo.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 1995
Abstract: Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photoluminescence (PL) showed a strong dependence of the PL linewidth on the substrate temperature.
URI: http://hdl.handle.net/10356/19674
Rights: NANYANG TECHNOLOGICAL UNIVERSITY
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
MiaoYubo1995.pdf
  Restricted Access
Main report11.71 MBAdobe PDFView/Open

Page view(s) 5

352
checked on Oct 21, 2020

Download(s) 5

3
checked on Oct 21, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.