Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19689
Title: Diamond film growth by microwave plasma enhanced chemical vapour deposition
Authors: Tan, Fong Hock.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 1995
Abstract: Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement and secondary ions mass spectrometry were being used to verify the presence of boron in the boron-doped diamond film. Silicon (Si) is mainly used as a substrate for the experimental studies.
URI: http://hdl.handle.net/10356/19689
Rights: NANYANG TECHNOLOGICAL UNIVERSITY
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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