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https://hdl.handle.net/10356/19689
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tan, Fong Hock. | en_US |
dc.date.accessioned | 2009-12-14T06:21:48Z | - |
dc.date.available | 2009-12-14T06:21:48Z | - |
dc.date.copyright | 1995 | en_US |
dc.date.issued | 1995 | - |
dc.identifier.uri | http://hdl.handle.net/10356/19689 | - |
dc.description.abstract | Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement and secondary ions mass spectrometry were being used to verify the presence of boron in the boron-doped diamond film. Silicon (Si) is mainly used as a substrate for the experimental studies. | en_US |
dc.format.extent | 160 p. | - |
dc.language.iso | en | - |
dc.rights | NANYANG TECHNOLOGICAL UNIVERSITY | en_US |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | en_US |
dc.title | Diamond film growth by microwave plasma enhanced chemical vapour deposition | en_US |
dc.type | Thesis | en_US |
dc.contributor.supervisor | Jaeshin, Ahn | en_US |
dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
dc.description.degree | Master of Engineering | en_US |
item.fulltext | With Fulltext | - |
item.grantfulltext | restricted | - |
Appears in Collections: | EEE Theses |
Files in This Item:
File | Description | Size | Format | |
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TanFongHock1995.pdf Restricted Access | Main report | 15.26 MB | Adobe PDF | View/Open |
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