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Title: Design concerns for EEPROM
Authors: Tan, Hong Mui.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 1995
Abstract: The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In this thesis, several areas relating to design concerns of the device have been explored. Phenomena such as charge trapping in tunnel oxide was investigated using the thin oxide MOS capacitor while device degradation was invesigaed on the EEPROM cell.
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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