Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19732
Title: Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
Authors: Ang, Chew Hoe
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 1995
Abstract: In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier stress.
URI: http://hdl.handle.net/10356/19732
Rights: NANYANG TECHNOLOGICAL UNIVERSITY
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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