Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19757
Title: Modeling of submicron MOSFETs
Authors: Chua, Ley Mui.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1994
Abstract: The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET current-voltage (I-V) characteristics.
URI: http://hdl.handle.net/10356/19757
Rights: NANYANG TECHNOLOGICAL UNIVERSITY
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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