Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19771
Title: Characterisation of compound semiconductors grown by molecular beam epitaxy
Authors: Zhang, Peng Hua
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1998
Abstract: In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied.
URI: http://hdl.handle.net/10356/19771
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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