Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19809
Title: Modeling of Eeprom
Authors: Liong, Luey Chwan.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 1992
Abstract: Flotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior.
URI: http://hdl.handle.net/10356/19809
Schools: School of Electrical and Electronic Engineering 
Rights: NANYANG TECHNOLOGICAL UNIVERSITY
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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