Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/19809
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dc.contributor.authorLiong, Luey Chwan.en_US
dc.date.accessioned2009-12-14T06:38:57Z-
dc.date.available2009-12-14T06:38:57Z-
dc.date.copyright1992en_US
dc.date.issued1992-
dc.identifier.urihttp://hdl.handle.net/10356/19809-
dc.description.abstractFlotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior.en_US
dc.format.extent111 p.-
dc.language.isoen-
dc.rightsNANYANG TECHNOLOGICAL UNIVERSITYen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic circuitsen_US
dc.titleModeling of Eepromen_US
dc.typeThesisen_US
dc.contributor.supervisorLiu, Po-chingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
item.grantfulltextrestricted-
item.fulltextWith Fulltext-
Appears in Collections:EEE Theses
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