Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/20743
Title: ZnO nanostructure growth and its application in light-emitting diodes
Authors: Hnin Lwin Lwin Aye.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2009
Abstract: In past few years, technology relating with semiconductor industry brought various new inventions into our daily life. With the development of semiconductor, interest in electronic and optoelectronic products becomes down to the nanoscale. One dimensional semiconducting materials show the potential to be used as building blocks for future nanoelectronics due to the reduced the device dimensions and their unique properties and functions Zinc oxide (ZnO) as one of the most promising semiconductor materials, has a wide direct energy bandgap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. Also, it may be the most richest family in the metal oxide semiconductor materials since various morphologies can be achieved in ZnO such as nanowires, nanorods, nanobelts, nanodisks, and nanotubes. Therefore, ZnO nanostructures have stirred new interest as a promising nanoelectronic material in UV lasers, light-emitting diodes, solar cells and gas sensors. The main purpose of this project is focus on growing ZnO nanostructures by using vapor phase transport technique and study the dependence of different morphologies on the different growth parameters. The surface morphology of the products is characterized by scanning electron microscope (SEM). Furthermore, light emitting diode based on the good quality ZnO nanostructure were fabricated and characterized.
URI: http://hdl.handle.net/10356/20743
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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